[12p-P16-1~19] 15.4 III-V-group nitride crystals

[12p-P16-6] Laser-based in situ monitoring of high In-content InGaN growth on GaN(0001)

〇(B)Tetsuya Yamamoto^{1, 2}, Akira Tamura^{1, 2}, Yoshio Honda^{1, 2}, Hiroshi Amano^{1, 2} (1.Nagoya Univ., 2.ARC)

Keywords:InGaN,Laser-based in situ monitoring