[12a-B1-1~12] 15.4 III-V-group nitride crystals

[12a-B1-12] Electrical properties of InGaN-based light-emitting diodes with potential barrier formed on V-pit

〇Kohei Sugimoto¹, Narihito Okada¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ.)

Keywords:semiconductor,light-emitting diode,superlattice