Emission characteristics of m-plane Al1-xInxN epilayers grown on a freestanding GaN substrate (III)

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Wed. Mar 11, 2015 1:15 PM - 6:45 PM B1 (6B-101)

6:15 PM - 6:30 PM

〇Kazunobu Kojima¹, Hirotaka Ikeda², Kenji Fujito², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Mitsubishi Chemical Corp.)

Keywords:AlInN