Reduction of bowing of GaN template using double sides growth by hydride vapor phase epitaxy

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Wed. Mar 11, 2015 1:15 PM - 6:45 PM B1 (6B-101)

2:30 PM - 2:45 PM

〇Takeshi Yamamoto¹, Hiroshi Ihara¹, Keisuke Yamane², Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.Toyohashi Univ.)

Keywords:GaN,HVPE,bowing