Fabrication of nano-stuructured InGaN/GaN multi quantum well using hydrogen environment anisotropic thermal etching

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Mar 13, 2015 4:15 PM - 6:00 PM B1 (6B-101)

5:00 PM - 5:15 PM

〇Tomoya Mizutani¹, Ryo Hachiya¹, Hiroki Furuhashi¹, Ryo Kita¹, Akihiko Kikuchi^1,² (1.Sophia Univ., 2.Sophia Nanotech ctr.)

Keywords:GaN,etching,nano structure