Characterization of InGaN based Devices on GaN Substrates by X-Ray Microbeam

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Mar 13, 2015 4:15 PM - 6:00 PM B1 (6B-101)

5:30 PM - 5:45 PM

〇Toshiya Yokogawa¹, Takuya Kakoi¹, Yasuhiko Imai², Shigeru Kimura² (1.Yamaguchi Univ., 2.JASRI)

Keywords:semiconductor,InGaN,X-ray diffraction