[11a-B1-1~12] 15.4 III-V族窒化物結晶

▲ [11a-B1-9] GaN growth on Hf foils using nearly lattice-matched HfN barriers by pulsed sputtering deposition

〇(D)Hyeryun Kim¹, Jitsuo Ohta¹, Atsushi Kobayashi¹, Kohei Ueno¹, Hiroshi Fujioka^{1, 2, 3} (1.The Univ. of Tokyo, 2.JST-CREST, 3.JST-ACCEL)

キーワード：Gallium nitride,Hafnium nitride,pulsed sputtering deposition