Impact of the preheating temperature on the ZnO TFT characteristics prepared by sol-gel method

Presentation information

Oral presentation

Joint Session K » Joint Session K

Wed. Mar 11, 2015 1:15 PM - 5:45 PM D1 (16-101)

3:45 PM - 4:00 PM

〇yuki kawakami¹, takahumi Daito¹, kenichi ogata¹, tosihiko maemoto¹, shigehiko sasa¹ (1.Osaka Inst. NMRC)

Keywords:Zinc Oxide,Sol-gel method,Thin-Film Transistor