Electrode material dependence on amorphous InGaZnO-based resistive switching memory

Presentation information

Oral presentation

Joint Session K » Joint Session K

Wed. Mar 11, 2015 1:15 PM - 5:45 PM D1 (16-101)

5:00 PM - 5:15 PM

〇Keisuke Kado¹, Yoshimitsu Yamauchi¹, Kyouhei Nabesaka¹, Mami Fujii¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

Keywords:amorphous InGaZnO,resistive switching,bipolar