Oral presentation

[11a-D1-1~8] Joint Session K

Wed. Mar 11, 2015 9:30 AM - 11:45 AM D1 (16-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[11a-D1-1] High-performance hydrogen gas sensors based on highly transparent conductive ZnO films for use in a sensitive material

〇Tetsuya Yamamoto¹, Junichi Nomoto¹, Hisao Makino¹, Seiichi Kishimoto² (1.Res. Inst., Kochi Univ. Tech., 2.Natl. Inst. Tech., Kochi Col.)

9:45 AM - 10:00 AM

[11a-D1-2] Enlarged process window in Nb:TiO₂ transparent conductive films with two-step anneal

〇Shoichiro Nakao^1,², Yasushi Hirose^1,^2,³, Tetsuya Hasegawa^1,^2,³ (1.KAST, 2.CREST, 3.Univ. of Tokyo)

10:00 AM - 10:15 AM

[11a-D1-3] Low-temperature deposition of V-doped ZnO thin films on polycarbonate substrate

〇Tomoya Suzuki¹, Hiroshi Chiba², Dai Abe², Tomoyuki Kawashima^1,², Katsuyoshi Washio^1,² (1.Tohoku Univ., 2.Grad. Schl. of Eng.,Tohoku Univ.)

10:15 AM - 10:30 AM

[11a-D1-4] Control and optimization of textured structure formed on AZO thin film surfaces

〇Toshinori Yamanaka¹, Ryosuke Uozaki¹, Toshihiro Miyata¹, Tadatsugu Minami¹ (1.OEDS R&D Center, K I T)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[11a-D1-5] Influence of grain boundary on carrier transport in polycrystalline transparent conducting Al-doped ZnO thin films

〇Ryousuke Uozaki¹, Toshinori Yamanaka¹, Toshihiro Miyata¹, Tadatsugu Minami¹ (1.OEDS R&D Center, K I T)

11:00 AM - 11:15 AM

[11a-D1-6] Contribution of europium and hydrogen donors in ZnO films

〇Housei Akazawa¹ (1.NTT DIC)

11:15 AM - 11:30 AM

[11a-D1-7] Calculation of Amorphous IGZO Structure using Tight-Binding Quantum Chemical Molecular Dynamics

〇SHINYA MORITA¹, HIROSHI ITO², YUJI HIGUCHI², NOBUKI OZAWA², MOMOJI KUBO² (1.Kobe Steel, LTD., 2.Tohoku Univ.)

11:30 AM - 11:45 AM

[11a-D1-8] Evaluation of IGZO thin films by using ESR

〇Yusuke Nonaka¹, Yoichi Kurosawa¹, Yoshihiro Komatsu¹, Noritaka Ishihara¹, Masashi Oota¹, Motoki Nakashima¹, Takuya Hirohashi¹, Masahiro Takahashi¹, Toshimitsu Obonai², Yasuharu Hosaka², Junichi Koezuka², Shunpei Yamazaki¹ (1.SEL, 2.AFD Inc.)

Oral presentation

[11p-D1-1~17] Joint Session K

Wed. Mar 11, 2015 1:15 PM - 5:45 PM D1 (16-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[11p-D1-1] [Young Scientist Presentation Award Speech] Effects of Critical Layers on Carrier Transport of Polycrystalline Al-Doped ZnO Films Prepared by Magnetron Sputtering (II)

〇Junichi Nomoto¹, Hisao Makino¹, Tetsuya Yamamoto¹ (1.Research Inst., Kochi Univ. Tech.)

1:30 PM - 1:45 PM

[11p-D1-2] Impact of Phonon Scattering due to Miniaturization of C-Axis-Aligned Crystalline IGZO FETs

〇Shinpei Matsuda¹, Erumu Kikuchi¹, Yasumasa Yamane¹, Yutaka Okazaki¹, Shunpei Yamazaki¹ (1.SEL)

1:45 PM - 2:00 PM

[11p-D1-3] Dependence of annealing temperature on N-doped InGaZnO thin film properties

〇SHINTARO NAKANO¹, YUYA MAEDA¹, TATSUYA OHGURO², HISAYO MOMOSE², TETSU MOROOKA², NOBUKI KANREI³, KOJI SUZUKI⁴ (1.Toshiba Corporation R&D Center, 2.Toshiba Corporation Semiconductor & Storage Products Company, 3.Toshiba Corporation Manufacturing Engineering Center, 4.Toshiba Research Consulting Corporation)

2:00 PM - 2:15 PM

△ [11p-D1-4] Photoluminescence and Donor Levels Due to Oxygen Vacancies in IGZO Thin Films

〇(M1C)Dongjing Chen¹, Takaaki Morimoto^1,², Nobuko Fukuda³, Yoshimichi Ohki^1,⁴ (1.SASE of Waseda Univ., 2.JSPS DC2, 3.FLEC of AIST, 4.RIMST of Waseda Univ.)

2:15 PM - 2:30 PM

[11p-D1-5] Investigation of irradiation effect of microwave and VUV light on oxide semiconductor film prepared by solution process at low temperature

〇(PC)Heajeong Cheong¹, Shintaro Ogura¹, Manabu Yoshida¹, Hirobumi Ushijima¹, Nobuko Fukuda¹, Sei Uemura¹ (1.AIST)

2:30 PM - 2:45 PM

[11p-D1-6] TFT performance of IZO Semiconductor Thin Films Prepared by Photo-Assisted Sol-Gel Processing

〇Takehito Kodzasa¹, Hea-Jeong Cheong¹, Sei Uemura¹, Manabu Yoshida¹, Satoshi Hoshino¹ (1.AIST-FLEC)

2:45 PM - 3:00 PM

△ [11p-D1-7] Effect of Wet-O₂ Annealing on the Characteristics of Solution-Derived Amorphous InZnO Thin-Film Transistors

〇Yukihiro Osada¹, Yasuaki Ishikawa¹, Mami Fujii¹, Yukiharu Uraoka¹ (1.NAIST)

3:00 PM - 3:15 PM

△ [11p-D1-8] Solution-Processed Metal Oxide Thin-Film Transistor with Printed-Silver Electrode

〇(DC)Satoshi Urakawa¹, Yasuaki Ishikawa¹, Yukihiro Osada¹, Mami Fujii¹, Masahiro Horita¹, Yukiharu Uraoka¹ (1.NAIST)

Break （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

[11p-D1-9] Influence Hydrogen on Electrical Properties of Zinc Tin Oxide (ZTO) Thin-Film Transistor

〇(M1C)Ryota Takenouchi¹, Tatsuya Toda¹, Rintaro Ishii³, Hiroki Takahashi³, Dapeng Wang^1,², Mamoru Furuta^1,² (1.Kochi Univ. of Tech.,, 2.Center for Nanotechnology, 3.MITSUI MINING & SMELTING CO., LTD.)

3:45 PM - 4:00 PM

△ [11p-D1-10] Impact of the preheating temperature on the ZnO TFT characteristics prepared by sol-gel method

〇yuki kawakami¹, takahumi Daito¹, kenichi ogata¹, tosihiko maemoto¹, shigehiko sasa¹ (1.Osaka Inst. NMRC)

4:00 PM - 4:15 PM

[11p-D1-11] Fabrication and Characterization of Glucose Sensors Based on a ZnO Field-Effect Transistor

〇(M1)Ken Iketani¹, Kazuto Koike¹, Yuichi Hirofuji¹, Toshihiko Maemoto¹, Shigehiko Sasa¹, Mitsuaki Yano¹ (1.Osaka Inst. of Tech., NMRC)

4:15 PM - 4:30 PM

[11p-D1-12] Zn-doping Effect in Amorphous InWO Thin-film Transistors

〇(P)Takio Kizu¹, Miki Miyanaga², Hideaki Awata², Toshihide Nbatame¹, Kazuhito Tsukagoshi¹ (1.NIMS, 2.Sumitomo Electric Industries Ltd.)

4:30 PM - 4:45 PM

[11p-D1-13] Dopant selection for control of charge carrier density and mobility in amorphous indium oxide based thin-film transistors

〇Nobuhiko Mitoma¹, Shinya Aikawa¹, Wei Ou-Yang¹, Xu Gao¹, Takio Kizu¹, Meng-Fang Lin¹, Akihiko Fujiwara², Toshihide Nabatame¹, Kazuhito Tsukagoshi¹ (1.NIMS WPI-MANA, 2.SPring-8)

4:45 PM - 5:00 PM

[11p-D1-14] Improvement of uniformity of IGZO film for large sputtering cathode

〇Yasuo Okubo¹, Tatsunori Isobe¹, Makoto Arai¹, Junya Kiyota¹, Kazuya Saito¹ (1.ULVAC)

5:00 PM - 5:15 PM

△ [11p-D1-15] Electrode material dependence on amorphous InGaZnO-based resistive switching memory

〇Keisuke Kado¹, Yoshimitsu Yamauchi¹, Kyouhei Nabesaka¹, Mami Fujii¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

5:15 PM - 5:30 PM

▼ [11p-D1-16] Analysis of Oxygen vacancies in the Interface of amorphous InGaZnO / Siloxane passivation film by X-ray photoelectron spectroscopy

〇(M2)Chaiyanan Kulchaisit¹, Haruka Yamazaki¹, Juan Paolo Bermundo¹, Mami Fujii¹, Masahiro Horita¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Inst. of Sci. and Tech.)

5:30 PM - 5:45 PM

▼ [11p-D1-17] Low temperature excimer laser annealing of a-InGaZnO thin-film transistors passivated by hybrid organic-inorganic passivation layer

〇(D)Juan Paolo Bermundo¹, Yasuaki Ishikawa¹, Mami Fujii¹, Michiel van der Zwan², Hiroshi Ikenoue³, Ryoichi Ishihara², Toshiaki Nonaka⁴, Yukiharu Uraoka¹ (1.Nara Inst. of Sci. and Tech., 2.Delft Univ. of Tech., 3.Kyushu Univ., 4.AZ Elect. Mat.)

Oral presentation

[12a-D1-1~12] Joint Session K

Thu. Mar 12, 2015 9:00 AM - 12:15 PM D1 (16-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[12a-D1-1] ZnO films formed by high-speed rotation-type mist-CVD method

〇HIRONOBU TANOUE¹, Wada Shohei¹, Yokoyama Yutaro¹, Taniguchi Takuya¹, Yamamoto Shinya¹, Nakamura Shohei¹, Naka Yoshihiro^1,³, Nagaoka Shoji^2,³, Nakamura Yusui^1,³ (1.Kumamoto Univ., 2.Kumamoto Industrial Research Institute, 3.Phoenics)

9:15 AM - 9:30 AM

△ [12a-D1-2] Synthesis of nitrogen doped ZnO nanoparticles using radio frequency thermal plasma

〇(DC)Yuto Hiragino¹, Toshimi Tanaka², Hiroshi Takeuchi², Akira Takeuchi², Yasuhisa Fujita¹ (1.Shimane Univ., 2.Takeuchi Elec. Co.)

9:30 AM - 9:45 AM

△ [12a-D1-3] Annealing effect on N-doped ZnO films grown by MOCVD method

〇Takuya Nakaura^1,³, Yoshitomo Harada³, Jianyu Wang¹, Takahiro Nagata¹, Takashi Sekiguchi¹, Toyohiro Chikyo¹, Setsu Suzuki², Takamasa Ishigaki³, Masatomo Sumiya¹ (1.NIMS., 2.COMMET, 3.Hosei Univ.)

9:45 AM - 10:00 AM

[12a-D1-4] Effects of Oxygen-Gas-Flow Rates and Ga Contents on Structural Properties of Ga-Doped ZnO Films Prepared by Reactive Plasma Deposition with a DC Arc Discharge

〇Tomoaki Terasako¹, Junichi Nomoto², Hisao Makino², Sho Shirakata¹, Tetsuya Yamamoto² (1.Grad. School Sci. & Eng., Ehime Univ., 2.Research Inst., Kochi Univ. Technol.)

10:00 AM - 10:15 AM

[12a-D1-5] Dependence of crystallinity on deposition temperature in V-doped ZnO ultrathin films grown on c-sapphire substrate

〇Akihiro Watanabe¹, Hiroshi Chiba², Tomoyuki Kawashima^1,², Katsuyoshi Washio^1,² (1.Tohoku Univ., 2.Tohoku Univ., Grad. Sch. Eng.)

10:15 AM - 10:30 AM

[12a-D1-6] Dependence of crystallinity on growth temperature in V-doped ZnO thin films on c-face and a-face sapphire substrates

〇Hiroshi Chiba¹, Akihiro Watanabe², Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Grad. Schl. of Eng., Tohoku Univ., 2.Tohoku Univ.)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[12a-D1-7] Air annealing treatment of ZnO layer grown by UHV sputtering

〇(M1)Kenji Matsuhisa¹, Hiroki Sakuma¹, Yuya Miyoshi¹, Ai Mizuno¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

11:00 AM - 11:15 AM

[12a-D1-8] Fabrication of ZnO films on c-plane sapphire substrate via nitrogen mediated crystallization: effects of grain density of buffer layers

Tomoaki Ide¹, Koichi Matsushima¹, Ryota Shimizu¹, Daisuke Yamashita¹, Hyunwoong Seo¹, Kazunori Koga¹, Masaharu Shiratani¹, 〇Naho Itagaki^1,² (1.Kyushu University, 2.JST PREST)

11:15 AM - 11:30 AM

△ [12a-D1-9] Helicon-Wave-Excited-Plasma Sputtering Epitaxy of ZnO films using the hydrothermal ZnO target (3): about shallow impurities

〇Yoshiki Yamazaki¹, Kentaro Furusawa¹, Sakuya Iwahashi¹, Kazunobu Kojima¹, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ.)

11:30 AM - 11:45 AM

△ [12a-D1-10] Helicon-Wave-Excited-Plasma Sputtering Epitaxy of ZnO films using the hydrothermal ZnO target (4) : about transition metal impurities

〇(B)Sakuya Iwahashi¹, Yoshiki Yamazaki¹, Kazunobu Kojima¹, Kentaro Furusawa¹, Akira Uedono², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Univ. Tsukuba)

11:45 AM - 12:00 PM

△ [12a-D1-11] Calibration and Control of In-plane Mg Doping Distribution in Mg_xZn_1−xO/ZnO Heterostructures

〇Masaki Uchida¹, Joseph Falson¹, Yusaburo Segawa², Yusuke Kozuka¹, Atsushi Tsukazaki^3,⁴, Masashi Kawasaki^1,² (1.Dept. of Appl. Phys., the Univ. of Tokyo, 2.CEMS, RIKEN, 3.IMR, Tohoku Univ., 4.JST-PRESTO)

12:00 PM - 12:15 PM

[12a-D1-12] Spectral responsivity of a Pt/ Mg_xZn_1-xO/n⁺-ZnO Schottky photodiode

〇Haruyuki Endo¹, Hideyuki Sato², Mohamed Belmoubarik², Kyo Takahashi¹, Tomohiro Nozaki², Masashi Sahashi², Yasube Kashiwaba³ (1.Iwate Ind. Res. Inst., 2.Tohoku Univ., 3.Iwate Univ.)

Oral presentation

[13p-D1-1~11] Joint Session K

Fri. Mar 13, 2015 4:15 PM - 7:15 PM D1 (16-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:15 PM - 4:30 PM

[13p-D1-1] Synthesis of alpha-Ga₂O₃ bulk single crystals and these structure analysis

〇Kentaro Kaneko^1,², Masaya Oda^1,², Shizuo Fujita¹, Toshimi Hitora² (1.Kyoto Univ., 2.FLOSFIA INC.)

4:30 PM - 4:45 PM

△ [13p-D1-2] Thermodynamic Study of Thermal Stability of β-Ga₂O₃ in Mixed Flows of H₂ and N₂

〇Rie Togashi¹, Kazushiro Nomura¹, Chihiro Eguchi¹, Takahiro Fukizawa¹, Ken Goto², Hisashi Murakami¹, Yoshinao Kumagai¹, Akito Kuramata², Shigenobu Yamakoshi², Akinori Koukitu¹ (1.Tokyo Univ. of Agri. & Tech., 2.Tamura Corporation)

4:45 PM - 5:00 PM

[13p-D1-3] Evaluation of Crystal Defect in β-Ga₂O₃ Crystal (2)

〇Tetsuya Nagai¹, Kengo Noami¹, Katsuhiko Nakai¹, Toshiro Futagi¹ (1.NSST)

5:00 PM - 5:15 PM

△ [13p-D1-4] Electrical Properties of Sn-Doped Ga₂O₃ Films Grown by Mist-CVD

〇Kazuaki Akaiwa¹, Lee Sam-Dong¹, Kentro Kaneko¹, Shizuo Fujita¹ (1.Kyoto Univ.)

5:15 PM - 5:30 PM

[13p-D1-5] Homoepitaxial growth of (-201)β -Ga₂O₃films by atmospheric pressure plasma enhanced CVD

〇Takuya Kiguchi¹, Yukinori Nose¹, Tuyoshi Uehara², Norifumi Fujimura¹ (1.Osaka Prefecture Univ., 2.Sekisui Integrated Research Inc.)

Break （5:30 PM - 5:45 PM）

5:45 PM - 6:00 PM

△ [13p-D1-6] Homoepitaxial Growth of β-Ga₂O₃ by Halide Vapor Phase Epitaxy

〇Kazushiro Nomura¹, Ken Goto², Kohei Sasaki^2,³, Katsuaki Kawara¹, Quang Tu Thieu⁴, Rie Togashi¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Masataka Higashiwaki³, Akito Kuramata², Shigenobu Yamakoshi², Bo Monemar^4,⁵, Akinori Koukitu¹ (1.Tokyo Univ. of Agri. and Tech., 2.Tamura Corp., 3.NICT, 4.TUAT GIRO, 5.Linkoping Univ.)

6:00 PM - 6:15 PM

△ [13p-D1-7] Oxygen-radical-assisted pulsed-laser deposition of gallium oxide alloy films

〇Ryo Wakabayashi¹, Mai Hattori¹, Takayoshi Oshima¹, Kohei Sasaki², Takekazu Masui², Akito Kuramata², Shigenobu Yamakoshi², Kohei Yoshimatsu¹, Akira Ohtomo^1,³ (1.Tokyo Tech., 2.Tamura Corporation, 3.MCES)

6:15 PM - 6:30 PM

△ [13p-D1-8] Evaluation of band-offset at β-(Al_xGa_1-x)₂O₃/β-Ga₂O₃ heterojunctions

〇Mai Hattori¹, Ryo Wakabayashi¹, Takayoshi Oshima¹, Kohei Sasaki², Takekazu Masui², Akito Kuramata², Sigenobu Yamakoshi², Koji Horiba^3,⁴, Hiroshi Kumigashira^3,⁴, Kohei Yoshimatsu¹, Akira Ohtomo^1,⁴ (1.Tokyo Tech., 2.Tamura Corporation, 3.PF-KEK, 4.MCES)

6:30 PM - 6:45 PM

△ [13p-D1-9] NiO buffer layer enhanced low-temperature epitaxial growth of β-Ga₂O₃ thin films by PLD

〇Daiji Fukuda¹, Daishi Shiojiri¹, Ryosuke Yamauchi¹, Nobuo Tsuchimine², Satoru Kaneko^1,³, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Inst. of Tech., 2.TOSHIMA Manu. co., Ltd., 3.Kanagawa Ind. Tech. Center)

6:45 PM - 7:00 PM

[13p-D1-10] Fabrication of MFIS structure with β-Ga₂O₃ thin film

〇Yuki Kondo¹, Akihiro Ozawa¹, Keisuke Nomura¹, Takeshi Kawae¹, Akiharu Morimoto¹ (1.Kanazawa Univ.)

7:00 PM - 7:15 PM

[13p-D1-11] Dependence of Stacking Fault Generation on Orientation of MBE-Grown β-Ga₂O₃

〇Kohei Sasaki¹, Akito Kuramata¹, Shigenobu Yamakoshi¹ (1.Tamura Corp.)

Oral presentation

[14a-D1-1~9] Joint Session K

Sat. Mar 14, 2015 9:00 AM - 11:30 AM D1 (16-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[14a-D1-1] Polarized Hard X-ray Photoemission Spectroscopy of Polar ZnO Single Crystal Surfaces

〇Takeo Ohsawa¹, Shigenori Ueda¹, Motohiro Suzuki², Naoki Ohashi¹ (1.NIMS, 2.JASRI/SPring-8)

9:15 AM - 9:30 AM

△ [14a-D1-2] Polarity control of ZnO thin films by a RF Magnetron Sputtering Method

〇(M1)Kei Tsunoda^1,², Takeo Ohsawa², Naoki Ohashi², Takamasa Ishigaki¹ (1.Hosei Univ., 2.NIMS)

9:30 AM - 9:45 AM

[14a-D1-3] Crystal symmetry breaking in ZnO and polarized light excitations

〇Hiroaki Matsui¹, Noriyuki Hasuike², Hiroshi Harima², Hitoshi Tabata¹ (1.The Univ. of Tokyo, 2.Kyoto Instit. of Technol.)

9:45 AM - 10:00 AM

[14a-D1-4] Photoconductive characteristics of ZnO single crystal substrates in the various atmospheres

〇Takami Abe¹, Syuhei Kamada¹, Syuzo Takahashi¹, Akira Nakagawa¹, Tetsuya Chiba¹, Michiko Nakagawa¹, Shigeki Chiba¹, Yasuhiro Kashiwaba², Masahiro Daibo¹, Ikuo Niikura¹, Yasube Kashiwaba¹, Hiroshi Osada¹ (1.Iwate Univ., 2.Sendai Nat. College of Tech.)

Break （10:00 AM - 10:15 AM）

10:15 AM - 10:30 AM

[14a-D1-5] MBE Growth of WO₃ Films on r-plane Sapphire Substrates

〇Masayuki Matsuo¹, Takayuki Murayama¹, Yoshiyuki Harada¹, Kazuto Koike¹, Shigehiko Sasa¹, Mitsuaki Yano¹, Katsuhiko Inaba², Shintaro Kobayashi² (1.Osaka Inst. of Tech., NMRC, 2.Rigaku Corp., X-Ray Res. Lab.)

10:30 AM - 10:45 AM

[14a-D1-6] Lattice Strain in NiO Epitaxial Films Grown by Sol-Gel Method

〇Yoshihiro Kokubun¹, Yasuhiro Meguro¹, Shinji Nakagomi¹ (1.Ishinomaki Senshu Univ.)

10:45 AM - 11:00 AM

[14a-D1-7] MOCVD growth of Cu₂O thin films on c-sapphire substrates ~Investigation for two-step growth technique~

〇Mizuki Teramura¹, Kai Taniguchi¹, Kentaro Taguchi¹, Kazuki Fujiwara¹, Hiroyasu Ishikawa¹ (1.Shibaura Inst.)

11:00 AM - 11:15 AM

[14a-D1-8] Fabrication of ZnO thin film by mist CVD method using molecular precursor solution

〇(M1)Ryosuke Goto¹, Hayato Shibuki¹, Keisuke Tanuma¹, Takumi Hatakeyama¹, Hiroki Nagai¹, Tomohiro Yamaguchi¹, Mitsunobu Sato¹, Tohru Honda¹ (1.Kogakuin Univ.)

11:15 AM - 11:30 AM

[14a-D1-9] Growth Mechanism of Zinc Sulfide Films by Mist Chemical Vapor Deposition

Yuichiro Yamasaki¹, 〇Kazuyuki Uno¹, Ichiro Tanaka¹ (1.Wakayama Univ.)

Sessions

Joint Session K » Joint Session K

[11a-D1-1~8] Joint Session K

[11p-D1-1~17] Joint Session K

△ [11p-D1-4] Photoluminescence and Donor Levels Due to Oxygen Vacancies in IGZO Thin Films

△ [11p-D1-7] Effect of Wet-O2 Annealing on the Characteristics of Solution-Derived Amorphous InZnO Thin-Film Transistors

△ [11p-D1-8] Solution-Processed Metal Oxide Thin-Film Transistor with Printed-Silver Electrode

△ [11p-D1-10] Impact of the preheating temperature on the ZnO TFT characteristics prepared by sol-gel method

△ [11p-D1-15] Electrode material dependence on amorphous InGaZnO-based resistive switching memory

▼ [11p-D1-16] Analysis of Oxygen vacancies in the Interface of amorphous InGaZnO / Siloxane passivation film by X-ray photoelectron spectroscopy

▼ [11p-D1-17] Low temperature excimer laser annealing of a-InGaZnO thin-film transistors passivated by hybrid organic-inorganic passivation layer

[12a-D1-1~12] Joint Session K

△ [12a-D1-2] Synthesis of nitrogen doped ZnO nanoparticles using radio frequency thermal plasma

△ [12a-D1-3] Annealing effect on N-doped ZnO films grown by MOCVD method

△ [12a-D1-9] Helicon-Wave-Excited-Plasma Sputtering Epitaxy of ZnO films using the hydrothermal ZnO target (3): about shallow impurities

△ [12a-D1-10] Helicon-Wave-Excited-Plasma Sputtering Epitaxy of ZnO films using the hydrothermal ZnO target (4) : about transition metal impurities

△ [12a-D1-11] Calibration and Control of In-plane Mg Doping Distribution in MgxZn1−xO/ZnO Heterostructures

[13p-D1-1~11] Joint Session K

△ [13p-D1-2] Thermodynamic Study of Thermal Stability of β-Ga2O3 in Mixed Flows of H2 and N2

△ [13p-D1-4] Electrical Properties of Sn-Doped Ga2O3 Films Grown by Mist-CVD

△ [13p-D1-6] Homoepitaxial Growth of β-Ga2O3 by Halide Vapor Phase Epitaxy

△ [13p-D1-7] Oxygen-radical-assisted pulsed-laser deposition of gallium oxide alloy films

△ [13p-D1-8] Evaluation of band-offset at β-(AlxGa1-x)2O3/β-Ga2O3 heterojunctions

△ [13p-D1-9] NiO buffer layer enhanced low-temperature epitaxial growth of β-Ga2O3 thin films by PLD

[14a-D1-1~9] Joint Session K

△ [14a-D1-2] Polarity control of ZnO thin films by a RF Magnetron Sputtering Method

Authentication

△ [11p-D1-7] Effect of Wet-O₂ Annealing on the Characteristics of Solution-Derived Amorphous InZnO Thin-Film Transistors

△ [12a-D1-11] Calibration and Control of In-plane Mg Doping Distribution in Mg_xZn_1−xO/ZnO Heterostructures

△ [13p-D1-2] Thermodynamic Study of Thermal Stability of β-Ga₂O₃ in Mixed Flows of H₂ and N₂

△ [13p-D1-4] Electrical Properties of Sn-Doped Ga₂O₃ Films Grown by Mist-CVD

△ [13p-D1-6] Homoepitaxial Growth of β-Ga₂O₃ by Halide Vapor Phase Epitaxy

△ [13p-D1-8] Evaluation of band-offset at β-(Al_xGa_1-x)₂O₃/β-Ga₂O₃ heterojunctions

△ [13p-D1-9] NiO buffer layer enhanced low-temperature epitaxial growth of β-Ga₂O₃ thin films by PLD