[11p-D1-1~17] Joint Session K

[11p-D1-13] Dopant selection for control of charge carrier density and mobility in amorphous indium oxide based thin-film transistors

〇Nobuhiko Mitoma¹, Shinya Aikawa¹, Wei Ou-Yang¹, Xu Gao¹, Takio Kizu¹, Meng-Fang Lin¹, Akihiko Fujiwara², Toshihide Nabatame¹, Kazuhito Tsukagoshi¹ (1.NIMS WPI-MANA, 2.SPring-8)

Keywords:indium oxide,doping,thin-film transistor