[13p-D1-1~11] Joint Session K

△ [13p-D1-6] Homoepitaxial Growth of β-Ga₂O₃ by Halide Vapor Phase Epitaxy

〇Kazushiro Nomura¹, Ken Goto², Kohei Sasaki^{2, 3}, Katsuaki Kawara¹, Quang Tu Thieu⁴, Rie Togashi¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Masataka Higashiwaki³, Akito Kuramata², Shigenobu Yamakoshi², Bo Monemar^{4, 5}, Akinori Koukitu¹ (1.Tokyo Univ. of Agri. and Tech., 2.Tamura Corp., 3.NICT, 4.TUAT GIRO, 5.Linkoping Univ.)

Keywords:semiconductor,Gallium Oxide,Halide Vapor Phase Epitaxy