[11p-D1-1~17] Joint Session K

[11p-D1-3] Dependence of annealing temperature on N-doped InGaZnO thin film properties

〇SHINTARO NAKANO¹, YUYA MAEDA¹, TATSUYA OHGURO², HISAYO MOMOSE², TETSU MOROOKA², NOBUKI KANREI³, KOJI SUZUKI⁴ (1.Toshiba Corporation R&D Center, 2.Toshiba Corporation Semiconductor & Storage Products Company, 3.Toshiba Corporation Manufacturing Engineering Center, 4.Toshiba Research Consulting Corporation)

Keywords:InGaZnO,Thin film transistor,Nitrogen doping