The 62nd JSAP Spring Meeting, 2015

Presentation information

Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[11p-P2-1~15] 15.6 Group IV Compound Semiconductors

Wed. Mar 11, 2015 1:30 PM - 3:30 PM P2 (Gymnasium)

1:30 PM - 3:30 PM

[11p-P2-14] Formation of Ohmic Contact for p-type 4H-SiC Surface using Laser Anneal System

〇YOSUKE NAKANISHI1, HIROAKI OKABE1, YU NAKAMURA1, KENSUKE TAGUCHI1, KAZUYUKI SUGAHARA1, NOBUYUKI TOMITA1, SATOSHI YAMAKAWA1 (1.Mitsubishi Electric)

Keywords:Silicon carbide,Ohmic Contact,Laser Anneal