Stability of 4H-polytype of 2D-nuclei during SiC solution growth

Presentation information

Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

Wed. Mar 11, 2015 1:30 PM - 3:30 PM P2 (Gymnasium)

1:30 PM - 3:30 PM

Ayano Hanafusa¹, Masayuki Higuchi¹, 〇Koji Ashida¹, Yasunori Kutsuma¹, Tadaaki Kaneko¹ (1.Kwansei Gakuin Univ.)

Keywords:Solution Growth,4H-SiC,Metastable Solvent Epitaxy