[11p-P2-1~15] 15.6 Group IV Compound Semiconductors

[11p-P2-3] Solution drift and crystalline morphology in the SiC solution growth

〇(M1)Takashi Kato¹, Kazuhito kamei^{1, 2}, Kazuhiko kusunoki², Kazuaki Seki² (1.Tohoku Univ., 2.Nippon Steel & Sumitomo Metal)

Keywords:solution growth