The 62nd JSAP Spring Meeting, 2015

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Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[11p-P2-1~15] 15.6 Group IV Compound Semiconductors

Wed. Mar 11, 2015 1:30 PM - 3:30 PM P2 (Gymnasium)

1:30 PM - 3:30 PM

[11p-P2-9] Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC

〇Daisuke Mori1, Kei Inoue1, Hideaki Teranishi1, Aki Takigawa1, Takayuki Hirose1 (1.Fuji Electric)

Keywords:SiC