[12a-A21-1~13] 13.8 Compound and power electron devices and process technology

[12a-A21-10] Activation of Implanted Si in GaN by Local Laser Annealing

〇(M1)Takaya Nagai¹, Akio Wakejima¹, Takashi Egawa¹, Tomoya Hirata², Satoshi Ando², Katsuhiko Tani² (1.Nagoya Inst. of Tech., 2.Y.A.C. Phoeton)

Keywords:GaN,Laser Annealing