[12a-A23-1~12] 13.6 Semiconductor English Session

▼ [12a-A23-12] 2-nm-EOT Y-Si-O Gate Stack Formation on Si_0.5Ge_0.5

〇CheTsung Chang¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

キーワード：SiGe