[12a-A27-1~9] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

[12a-A27-2] Surface reaction during the slow Si etching using F2 and NO2

〇Satomi Tajima¹, Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

Keywords:Chemical dry etching