Oral presentation

[11a-A27-1~13] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

Wed. Mar 11, 2015 9:00 AM - 12:30 PM A27 (6A-202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[11a-A27-1] [Young Scientist Presentation Award Speech] Fabrication and Electrical Properties of Nanogap Electrodes Using Semiconductor Process

〇Yasuhito Yoshimizu¹, Yusuke Tanaka¹, Hiroshi Tomita¹ (1.TOSHIBA Corp.)

9:15 AM - 9:30 AM

△ [11a-A27-2] Planarization of SiC wafers by use of a rotating Pt electrode

〇Tomoki Akai¹, Kentaro Imamura¹, Hikaru Kobayashi¹ (1.ISIR, Osaka Univ.)

9:30 AM - 9:45 AM

△ [11a-A27-3] Investigation of Phonon Deformation Potentials in SiGe with High Ge Concentration

〇Kazuma Takeuchi¹, Daisuke Kosemura¹, Shotaro Yamamoto¹, Motohiro Tomita^1,³, Koji Usuda², Atsushi Ogura¹ (1.Meiji Univ., 2.AIST-GNC, 3.JSPS Research Fellow DC)

9:45 AM - 10:00 AM

△ [11a-A27-4] Evaluation of Anisotropic Biaxial Stress in Mesa-Shaped SiGe Nanostructure with High Ge Concentration

〇Shotaro Yamamoto¹, Kazuma Takeuchi¹, Motohiro Tomita^1,³, Daisuke Kosemura¹, Koji Usuda², Atsushi Ogura¹ (1.Meiji Univ., 2.AIST-GNC, 3.JSPS Research Fellow DC)

10:00 AM - 10:15 AM

△ [11a-A27-5] Evaluation of Stress Relaxation Profile in Entire-Ge-Concentration-Range Strained SiGe Nanostructures on Si or Ge Substrate by EBSP

〇(D)Motohiro Tomita^1,², Daisuke Kosemura¹, Koji Usuda³, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS DC, 3.GNC, AIST)

10:15 AM - 10:30 AM

△ [11a-A27-6] Concentration of hydrogen and splitting water using silicon nanoparticle

〇shinsuke matsuda¹, yuki kobayashi¹, tomoki akai¹, kentaro imamura¹, hikaru kobayashi¹ (1.ISIR Osaka Univ.)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

△ [11a-A27-7] Relationship between Ag Coverage and Signal Enhancement In the Raman Analysis of the Strained-Si Surface

〇Takahiro Kijims¹, Shotaro Yamamoto¹, Ryo Yokogawa¹, Kazuma Takeuchi¹, Tatsumi Murakami¹, Daisuke Kosemura¹, Atsushi Ogura¹ (1.Meiji Univ.)

11:00 AM - 11:15 AM

▼ [11a-A27-8] Band Bending Model Reproducing Si(111) Hole Subband Levels Measured by ARPES

〇Idayu Nur¹, Sakura Nishino Takeda¹, Takeshi J. Inagaki¹, Hiroshi Daimon¹ (1.NAIST)

11:15 AM - 11:30 AM

△ [11a-A27-9] Reproducibility of laser-based soft-error simulation employing two-photon absorption process

〇Hiroaki Itsuji^1,², Daisuke Kobayashi^1,², Kazuyuki Hirose^1,² (1.Univ. Tokyo, 2.ISAS/JAXA)

11:30 AM - 11:45 AM

△ [11a-A27-10] Tolerance for Single Event Effects of Tunnel FET

〇Yan Wu¹, Kohta Yamamoto¹, Daisuke Ieki¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

11:45 AM - 12:00 PM

△ [11a-A27-11] Film Thickness Dependence of the Micro-Wall Solar Cell with Electric-Field Effect

〇(M1)Kohei Oki¹, Wakamiya Shota¹, Heya Akira¹, Matsuo Naoto¹ (1.Univ. of Hyogo)

12:00 PM - 12:15 PM

[11a-A27-12] Characterization of Electron Field Emission from Multiply-Stacking Si Quantum Dots

〇Daichi Takeuchi¹, Katsunori Makihara¹, Akio Ohta², Mitsuhisa Ikeda³, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.Nagoya Univ. VBL, 3.Hiroshima Univ.)

12:15 PM - 12:30 PM

[11a-A27-13] Effect of P-Doping on Photoluminescence Properties of Si Quantum Dots with Ge Core

〇Keigo Kondou¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

Oral presentation

[12a-A27-1~9] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

Thu. Mar 12, 2015 10:00 AM - 12:30 PM A27 (6A-202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:00 AM - 10:15 AM

[12a-A27-1] Annealing ambient dependence of Si surface flattening process

〇Sohya Kudoh¹, Nithi Atthi¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

10:15 AM - 10:30 AM

[12a-A27-2] Surface reaction during the slow Si etching using F2 and NO2

〇Satomi Tajima¹, Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

10:30 AM - 10:45 AM

[12a-A27-3] Fabrication and evaluation of Si nanowires synthesized by Cu assisted electroless etching.

〇Shohei Takahashi¹, Sadao Adachi¹ (1.Gunma Univ.)

10:45 AM - 11:00 AM

[12a-A27-4] The SiO₂/Si interface structures evaluated by AES using Zr Lα source

〇Yuji Amano^1,², Daisuke Kobayashi², Hiroshi Nohira¹, Kazuyuki Hirose² (1.Tokyo City Univ, 2.ISAS/JAXA)

11:00 AM - 11:15 AM

[12a-A27-5] Metal concentration on wafer surface contaminated by pure water

〇MASATO NAKATSU¹ (1.Mie Fujitsu Semiconductor)

Break （11:15 AM - 11:30 AM）

11:30 AM - 11:45 AM

[12a-A27-6] Correction Method for Trapping Effects in QSSPC Life Time Measurement

〇akira nakayama¹, hiromichi yoshikawa¹ (1.Kyocera)

11:45 AM - 12:00 PM

[12a-A27-7] Examination of RDF Measurements by SSRM

〇Kazuya Matsuzawa¹, Shogo Itai¹, Mizuki Ono¹, Takamitsu Ishihara¹, Li Zhang¹ (1.Corp. R&D, Toshiba)

12:00 PM - 12:15 PM

[12a-A27-8] Evaluation of low dopant concentrations using scanning nonlinear dielectric microscopy

〇JUN HIROTA¹, MASAMUNE TAKANO¹, SHIRO TAKENO¹, HIROSHI AKAHORI¹, NORIMICHI CHINONE², YASUO CHO² (1.Toshiba Semiconductor & Storage Products Company, 2.RIEC,Tohoku Univ)

12:15 PM - 12:30 PM

[12a-A27-9] Laser-assisted Atom Probe Tomography with Deep-Ultraviolet Laser

〇Teruyuki Kinno¹, Tadakatsu Ohkubo², Mitsuhiro Tomita¹, Kazuhiro Hono² (1.Toshiba R&D Center, 2.NIMS)

Oral presentation

[12p-A27-1~15] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

Thu. Mar 12, 2015 2:00 PM - 6:00 PM A27 (6A-202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[12p-A27-1] [Young Scientist Presentation Award Speech] Atomistic Origin of Thermal Conductivity Reduction in Si Nanowire Covered with SiO₂ Film

〇Tomofumi Zushi^1,³, Kenji Ohmori², Keisaku Yamada², Takanobu Watanabe¹ (1.Waseda Univ., 2.Univ. of Tsukuba, 3.JSPS Research Fellow)

2:15 PM - 2:30 PM

[12p-A27-2] Acoustic Phonons and Their Thermal Transport in Corrugated Silicon Nanowires

〇Junichi Hattori¹, Vladimir Poborchii¹, Tetsuya Tada¹ (1.AIST)

2:30 PM - 2:45 PM

▲ [12p-A27-3] Atomistic phonon study of Hydrogen-terminated extremely thin silicon films

〇Manoharan Muruganathan¹, Hiroshi Mizuta^1,² (1.JAIST, 2.Univ. of Southampton)

2:45 PM - 3:00 PM

[12p-A27-4] Electronic properties of B- or P-doped Si quantum dots ~ Doping-site dependence of impurity levels ~

〇Chioko Kaneta¹ (1.FUJITSU LABORATORIES Ltd.)

3:00 PM - 3:15 PM

[12p-A27-5] Ab initio analysis on the stability of metal atoms in SiO₂/Si structure

〇(M2)Daiki Shibata¹ (1.Okayama Pref. Univ.)

3:15 PM - 3:30 PM

[12p-A27-6] Theory of point defects at metal/Ge interfaces: First-principles study on MIGS effects

〇Shogo Sasaki¹, Takashi Nakayama¹ (1.Chiba Univ.)

Break （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[12p-A27-7] First-Principles calculation of defect levels and defect-formation energies in 4H-SiC

〇Nobuhiko Kato¹, Kazuyuki Okazaki¹, Hideaki Koike¹ (1.AdvanceSoft.Corp)

4:00 PM - 4:15 PM

[12p-A27-8] A CMOS Inverter Chain Analysis by Time-dependent and Three Dimensional Device Simulation

〇Masanori Harada¹, Takuhito Kuwabara¹, Yasuyuki Ookura¹, Ken Yamaguchi¹, Hideaki Koike¹ (1.AdvanceSoft)

4:15 PM - 4:30 PM

[12p-A27-9] Analysis of breakdown voltage in Si-nMOSFET with trapezoidal channel

〇Yoshihiro Yamada¹, Yasuyuki Ookura¹, Ken Yamaguchi¹, Hideaki Koike¹ (1.AdvanceSoft Corporation)

4:30 PM - 4:45 PM

[12p-A27-10] Mixedmode Simulation with Simplified SBD model

〇Kazuya Matsuzawa¹, Masatoshi Abe¹, Yoshinori Oda¹, Jun Komachi¹, Hiroyuki Ito¹, Yutaka Akiyama¹ (1.STARC)

4:45 PM - 5:00 PM

[12p-A27-11] On the iteration loops of semiconductor device simulation with domain decomposition

〇Koichi Fukuda¹, Junichi Hattori¹, Hiroo Koshimoto¹, Tsutomu Ikegami¹ (1.AIST)

5:00 PM - 5:15 PM

[12p-A27-12] Monte Carlo Simulation of Avalanche Multiplication Effect in Ultrafast Image Sensor

〇Natsumi Minamitani¹, V. T. S. Dao², Kazuhiro Shimonomura², T. G. Etoh², Yoshinari Kamakura¹ (1.Osaka Univ., 2.Ritsumeikan Univ.)

5:15 PM - 5:30 PM

[12p-A27-13] Numerical Simulation of Soft Error Rate in Nonvolatile Memories

〇Go Wakimura¹, Kamakura Yoshinari¹ (1.Osaka Univ.)

5:30 PM - 5:45 PM

[12p-A27-14] Heavy ion induced parasitic bipolar effects in SOI-MOSFETs

〇(M1C)Kohta Yamamoto¹, Daisuke Ieki¹, Yan Wu¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

5:45 PM - 6:00 PM

[12p-A27-15] Feasibility study on soft-error simulation with a model for radiation-induced increase in local temperature

〇Daisuke Kobayashi^1,², Taichi Ito¹, Kazuyuki Hirose^1,² (1.ISAS/JAXA, 2.U. Tokyo)

Poster presentation

[13p-P16-1~4] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P16 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:30 PM - 6:30 PM

[13p-P16-1] Configurational stability and electronic structure of the Al, N doped Si

〇Tomoe Yayama¹, Chikyo Toyohiro¹ (1.NIMS)

4:30 PM - 6:30 PM

[13p-P16-2] Impact of annealing conditions for atomic-scale morphology of Ge surfaces

〇Yukinori Morita¹, Hiroyuki Ota¹, Meishoku Masahara¹, Tatsuro Maeda¹ (1.AIST)

4:30 PM - 6:30 PM

[13p-P16-3] Conditions of wet etching process for Ga-In-O thin films

〇(B)Kuniaki Yoshida¹, Shuhei Fujioka¹, Ryosuke Goto¹, Takeyoshi Onuma^1,², Hiroki Nagai¹, Tomohiro Yamaguchi¹, Tohru Honda¹ (1.Kogakuin Univ., 2.TNCT.)

4:30 PM - 6:30 PM

[13p-P16-4] Study on the Electrical Characteristics which Used Self-bias Channel MOS Diode for Photovoltaic Cell

〇Daisuke Yamada¹, Kudoh Tsugutomo¹, Sugawara Fumihiko² (1.Kanagawa inst., 2.Tohoku Univ.)

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

[11a-A27-1~13] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

△ [11a-A27-2] Planarization of SiC wafers by use of a rotating Pt electrode

△ [11a-A27-3] Investigation of Phonon Deformation Potentials in SiGe with High Ge Concentration

△ [11a-A27-4] Evaluation of Anisotropic Biaxial Stress in Mesa-Shaped SiGe Nanostructure with High Ge Concentration

△ [11a-A27-5] Evaluation of Stress Relaxation Profile in Entire-Ge-Concentration-Range Strained SiGe Nanostructures on Si or Ge Substrate by EBSP

△ [11a-A27-6] Concentration of hydrogen and splitting water using silicon nanoparticle

△ [11a-A27-7] Relationship between Ag Coverage and Signal Enhancement In the Raman Analysis of the Strained-Si Surface

▼ [11a-A27-8] Band Bending Model Reproducing Si(111) Hole Subband Levels Measured by ARPES

△ [11a-A27-9] Reproducibility of laser-based soft-error simulation employing two-photon absorption process

△ [11a-A27-10] Tolerance for Single Event Effects of Tunnel FET

△ [11a-A27-11] Film Thickness Dependence of the Micro-Wall Solar Cell with Electric-Field Effect

[12a-A27-1~9] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

[12p-A27-1~15] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

▲ [12p-A27-3] Atomistic phonon study of Hydrogen-terminated extremely thin silicon films

[13p-P16-1~4] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

Authentication