[12a-A27-1~9] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

[12a-A27-8] Evaluation of low dopant concentrations using scanning nonlinear dielectric microscopy

〇JUN HIROTA¹, MASAMUNE TAKANO¹, SHIRO TAKENO¹, HIROSHI AKAHORI¹, NORIMICHI CHINONE², YASUO CHO² (1.Toshiba Semiconductor & Storage Products Company, 2.RIEC,Tohoku Univ)

Keywords:semiconductor,scanning nonlinear dielectric microscopy,impurity