[12a-A29-1~11] 13.4 Si wafer processing /MEMS/Integration technology

[12a-A29-11] Fabrication and Demonstration of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge p- and n-MISFETs for Stacked Channel 3D-IC

〇Yoshiki Kamata¹, Masahiro Koike¹, Etsuo Kurosawa¹, Masashi Kurosawa^{2, 3}, Hiroyuki Ota¹, Osamu Nakatsuka², Shigeaki Zaima², Tsutomu Tezuka¹ (1.GNC-AIST, 2.Nagoya Univ., 3.JSPS)

Keywords:germanium,poly-crystalline,CMOS