The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[12a-B4-1~10] 15.6 Group IV Compound Semiconductors

Thu. Mar 12, 2015 9:00 AM - 11:45 AM B4 (6B-104)

11:00 AM - 11:15 AM

△ [12a-B4-8] Temperature dependence of Hall effect in p-type 4H-SiC with various doping concentrations

〇Satoshi Asada1, Takafumi Okuda1, Tsunenobu Kimoto1, Jun Suda1 (1.Kyoto Univ.)

Keywords:4H-SiC,Hall effect,Concentration