[12a-B4-1~10] 15.6 Group IV Compound Semiconductors

[12a-B4-9] ESR study on hydrogen passivation of vacancy defects and formation of hydrogen complexes in 4H-SiC

〇Souki Tanai¹, Kouki Murakami¹, Takafumi Okuda², Jun Suda², Tsunenobu Kimoto², Ryouji Kosugi³, Takeshi Ohshima⁴, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.Kyoto Univ., 3.AIST, 4.JAEA)

Keywords:4H-SiC,Hydrogen,ESR