Current-injected operation of GaInAs/InP MQW LED fabricated on wafer-bonded InP/Quartz substrate

Presentation information

Oral presentation

3 Optics and Photonics » 3.13 Semiconductor optical devices

Thu. Mar 12, 2015 2:00 PM - 7:00 PM A17 (6A-207)

5:00 PM - 5:15 PM

〇Keiichi Matsumoto¹, Makoto Takasu¹, Yoshinori Kanaya¹, Junya Kishikawa¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:Wafer direct bonding,MOVPE,LED