Oral presentation

[12a-A17-1~15] 3.13 Semiconductor optical devices

Thu. Mar 12, 2015 9:00 AM - 1:00 PM A17 (6A-207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[12a-A17-1] Fabrication of High Density Sub 10 nm Ge Nanodisks and Its Optical Characteristics Using Bio-template and Neutral Beam Etching

〇Takuya Fujii^1,², Taiga Isoda^3,⁵, Mohamed-Tahar Chentir^1,⁴, Hirotaka Endo², Kohei M. Itoh^3,⁵, Seiji Samukawa^1,^4,⁵ (1.Tohoku Univ., 2.Honda R&D, 3.Keio Univ., 4.WPI-AIMR, 5.JST-CREST)

9:15 AM - 9:30 AM

▲ [12a-A17-2] Change in Photo Induced Minority Carrier Lifetime of PN Junction with Bias Voltage

〇(B)Takayuki Motoki¹, Keisuke Yasuta¹, Shousuke Saitou¹, Hidenao Suzuki¹, Shousuke Kimura¹, Tomohiko Nakamura¹, Masahiko Hasumi¹, Toshiyuki Samesima¹ (1.TUAT)

9:30 AM - 9:45 AM

[12a-A17-3] Measurements of Solar Cell Conversion Efficiency Based on Electrical Substitution Method

〇Terubumi Saito^1,², Yamato Abe¹, Koki Sato¹, Minato Takesawa² (1.Tohoku Inst. Tech., 2.Graduate School, Tohoku Inst. Tech.)

9:45 AM - 10:00 AM

[12a-A17-4] Photocurrent multiplication in Ga₂O₃/CuInGaSe₂ heterojunction photodiodes

〇Kenji Kikuchi¹, Shigeyuki Imura¹, Kazunori Miyakawa¹, Hiroshi Ohtake¹, Misao Kubota¹, Tokio Nakada² (1.NHK STRL, 2.Tokyo Univ.of Sci.)

10:00 AM - 10:15 AM

[12a-A17-5] Detection Wavelength Control for QDIPs with AlGaAs Proximity Barriers

〇Sota Kagami^1,², Tomo Tanaka¹, Masahiro Kakuda², Katsuyuki Watanabe³, Tsuyoshi Yamanoto^1,², Masayuki Shirane^1,², Shinichi Yorozu^1,², Yasuhiko Arakawa^2,³ (1.NEC Corp., 2.NanoQuine, 3.ISS the Univ. of Tokyo)

10:15 AM - 10:30 AM

[12a-A17-6] Charge-Sensitive Infrared Phototransistors (CSIP) with a Plasmonic Nanogap Antenna

〇Sunmi Kim¹, Susumu Komiyama^2,³, Takashi Satoh¹, Mikhail Patrashin³, Yusuke Kajihara¹ (1.IIS, Univ. of Tokyo, 2.Dept. Basic Sci., Univ. of Tokyo, 3.NICT)

10:30 AM - 10:45 AM

[12a-A17-7] Reduction of Insertion Loss of Electrooptic Tunable 1×2 Tapered Multimode Interference Coupler

〇Makoto Kaneko¹, Naomichi Kawasaki¹, Joo-Hyong Noh¹, Taro Arakawa¹ (1.Yokohama National Univ.)

10:45 AM - 11:00 AM

[12a-A17-8] Design of Double Microring Resonator-Loaded Mach-Zehnder 2×2 Optical Switch

〇Kento Hori¹, Masaki Nishimura¹, Taro Arakawa¹, Yasuo Kokubun¹ (1.Yokohama National Univ.)

11:00 AM - 11:15 AM

[12a-A17-9] Enhancement of electro-optic coefficient for electro-optic polymer/TiO₂ multilayer slot waveguide modulators by barrier layer and cladding layer

〇Hidehiro Nakamura¹, Youssef Jouane¹, J. Luo², Alex K-Y. Jen², Yasuhumi Enami¹ (1.Kochi Univ. of Tech., 2.Univ. of Washington)

Break （11:15 AM - 11:30 AM）

11:30 AM - 11:45 AM

[12a-A17-10] Fundamental experiment of the AlAs selective oxidation using intermixing method

〇Tetsi Gi¹, Tomoyuki Miyamoto¹ (1.P&I Lab., Tokyo Tech.)

11:45 AM - 12:00 PM

▲ [12a-A17-11] Fabrication of SiC Membrane High Contrast Grating Using Nanoimprint Lithography

〇(D)YingYu Lai^1,², Shunya Inoue¹, Tien-Chang Lu², Shing-Chung Wang², Fumio Koyama¹ (1.TIT, 2.NCTU)

12:00 PM - 12:15 PM

△ [12a-A17-12] Transverse-mode control of transverse-coupled cavity VCSELs using Vernier effect

〇(PC)Masanori Nakahama¹, Hiroki Kobayashi¹, Sho Maruyama¹, Takahiro Sakaguchi¹, Akihiro Matsutani², Fumio Koyama¹ (1.Tokyo Tech., 2.Semiconductor and MEMS Processing Center)

12:15 PM - 12:30 PM

[12a-A17-13] Widening of operation temperature range of VCSELs by using excited quantized level

〇(M2)Ken Tsunoda¹, Akihiro Matsutani², Tomoyuki Miyamoto¹ (1.Tokyo Tech. P&I Lab., 2.Tokyo Tech. Tech.Dep)

12:30 PM - 12:45 PM

▲ [12a-A17-14] Chirp Reduction Along with Modulation Bandwidth Enhancement Utilizing Coupled Cavity VCSEL

〇(M1)Shanting Hu¹, Fumio Koyama¹ (1.Titech)

12:45 PM - 1:00 PM

▲ [12a-A17-15] Fabrication and photoluminescence characterization of capsule-shaped metallic InP/InGaAs cavity structures

〇(D)Baifu Zhang¹, Takuya Okimoto¹, Takuo Tanemura¹, Yoshiaki Nakano¹ (1.The Univ. of Tokyo)

Oral presentation

[12p-A17-1~19] 3.13 Semiconductor optical devices

Thu. Mar 12, 2015 2:00 PM - 7:00 PM A17 (6A-207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[12p-A17-1] [Young Scientist Presentation Award Speech] Fabrication and Experimental Demonstration of InP Monolithic Polarization Modulator Using Half-Ridge Waveguide Structure

〇Yuto Kawabata¹, Masaru Zaitsu¹, Takuo Tanemura¹, Yoshiaki Nakano¹ (1.Univ. of Tokyo)

2:15 PM - 2:30 PM

△ [12p-A17-2] Optical interconnection between III-V chips on Si by using photonic wire bonding

〇(M2)ZhiChen Gu¹, Tomohiro Amemiya^2,³, Atsushi Ishikawa³, Yuki Atsumi⁴, JoonHyun Kang¹, Takuo Hiratani¹, Nobuhiko Nishiyama¹, Takuo Tanaka³, Shigehisa Arai^1,² (1.Tokyo Tech, 2.QNERC, 3.RIKEN, 4.AIST)

2:30 PM - 2:45 PM

[12p-A17-3] Spot-size converter integrated quantum dot laser diodes on GaAs substrate.

〇Ayahito Uetake¹, Kazumasa Takabayashi¹, Tokuharu Kimura¹, Tsuyoshi Yamamoto¹, Masaomi Yamaguchi², Kan Takada², Keizo Takemasa², Mitsuru Sugawara², Yasuhiko Arakawa³ (1.Fujitsu Labs., 2.QD laser, 3.INQIE, Univ. of Tokyo)

2:45 PM - 3:00 PM

[12p-A17-4] Optical properties of InAs QD laser diode for Near-infrared broadband light source[2]

〇Yoshinori Sawado¹, Yoshizawa Katsumi¹, Kouichi Akahane², Naokatsu Yamamoto² (1.PioneerMTC, 2.NICT)

3:00 PM - 3:15 PM

[12p-A17-5] Development of broadband QD ridge-waveguide laser diode in 1.1μm

〇Katsumi Yoshizawa¹, Yoshinori Sawado¹, Akahane Kouichi², Yamamoto Naokatsu² (1.Pioneer MTC, 2.NICT)

3:15 PM - 3:30 PM

[12p-A17-6] Current injection characteristics of modulation doped InAs/InP double capped quantum dots structure

〇(M1)Toshiki Sukigara¹, Yuta Yamamoto¹, Tetsuo Nishiyama¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

3:30 PM - 3:45 PM

[12p-A17-7] Surface corrugation and optical properties of InGaAs layers grown on (775) B InP substrate by Molecular Beam Epitaxy and their indium composition dependence

〇Teruyoshi Matsuda¹, Satoshi Shimomura¹, Shun Morisada¹ (1.Ehime Univ.)

3:45 PM - 4:00 PM

[12p-A17-8] Fabrication of Two-Color Surface Emitting Laser in a QD Coupled Cavity Formed by Wafer-Bonding

Chiho Harayama¹, 〇Hiroto Ota¹, Tomohisa Maekawa¹, Xiangmeng Lu¹, Naoto Kumagai¹, Takahiro Kitada¹, Toshiro Isu¹ (1.Univ. of Tokushima)

4:00 PM - 4:15 PM

[12p-A17-9] Analysis of the quantum levels of InAs/InGaAsP strained quantum dots

〇Moeka Yamaguchi¹, Nobuko Arai¹, Yume Ide¹, Hajime Imai¹ (1.Japan Woman's Univ.)

Break （4:15 PM - 4:30 PM）

4:30 PM - 4:45 PM

△ [12p-A17-10] Room-temperature continuous-wave operation of semiconductor membrane distributed-reflector laser with butt-joint built-in structure

〇Takuo Hiratani¹, Daisuke Inoue¹, Takahiro Tomiyasu¹, Yuki Atsuji¹, Tomohiro Amemiya², Nobuhiko Nishiyama¹, Shigehisa Arai^1,² (1.Tokyo Tech, 2.QNERC)

4:45 PM - 5:00 PM

△ [12p-A17-11] Low voltage operation of GaInAsP/InP Membrane Laser

〇Yuki Atsuji¹, Kai Fukuda¹, Takumi Hiratani¹, Daisuke Inoue¹, Tomohiro Amemiya², Nobuhiko Nishiyama¹, Shigehisa Arai^1,² (1.Tokyo Tech., 2.QNERC)

5:00 PM - 5:15 PM

[12p-A17-12] Current-injected operation of GaInAs/InP MQW LED fabricated on wafer-bonded InP/Quartz substrate

〇Keiichi Matsumoto¹, Makoto Takasu¹, Yoshinori Kanaya¹, Junya Kishikawa¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

5:15 PM - 5:30 PM

[12p-A17-13] Bonding interface characteristics of directly-bonded InP/Si substrate

〇(M1)Junya Kishikawa¹, Keiichi Matsumoto¹, Yoshinori Kanaya¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

5:30 PM - 5:45 PM

△ [12p-A17-14] Photoluminescence in GeSn-on-quartz structures fabricated by rapid thermal annealing

〇(M1)takashi amamoto¹, kouhei tominaga¹, keiko kajimura¹, takuji hosoi¹, takayoshi shimura¹, heiji watanabe¹ (1.Osaka Univ.)

5:45 PM - 6:00 PM

[12p-A17-15] Investigation of quantum well intermixing on III-V-OI wafer

〇Seiya Takashima^1,², Yuki Ikku^1,², Mitsuru Takenaka^1,², Shin-ichi Takagi^1,² (1.The Univ. of Tokyo, 2.JST-CREST)

6:00 PM - 6:15 PM

[12p-A17-16] Guided Light Propagation Loss Reduction Using GaAsP Strained Quantum Well Selective Area Disordering by F Ion Implantation and Thermal Annealing

Shinya Okuda¹, 〇Masahiro Uemukai¹, Toshiaki Suhara¹ (1.Osaka Univ.)

6:15 PM - 6:30 PM

[12p-A17-17] Proposal and Analysis of Resonance-Shifted DFB-LD for High Efficiency Operation

〇(M1)Keiichiro Ichikawa¹ (1.Ritsumeikan Univ.)

6:30 PM - 6:45 PM

[12p-A17-18] Experiments on high-speed switching of helicity in circular polarization with spin-LED

〇Masaki Aoyama¹, Nozomi Nishizawa¹, Kazuhiro Nishibayashi¹, Hiro Munekata¹ (1.Imaging Sci. & Eng. Lab., Tokyo Inst. of Tech.)

6:45 PM - 7:00 PM

[12p-A17-19] Light Extraction Enhancement of 265nm Deep-Ultraviolet LEDs with High Power DC Operation at over 90 mW

〇Shin-ichiro Inoue¹, Naoki Tamari^1,², Manabu Taniguchi¹, Kousei Nakaya¹, Toru Kinoshita², Toshiyuki Obata², Hiroyuki Yanagi² (1.NICT, 2.Tokuyama Co.)

Poster presentation

[13p-P4-1~3] 3.13 Semiconductor optical devices

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P4 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:30 PM - 6:30 PM

[13p-P4-1] Fabrication and characterization of ridge-waveguide laser consisting of high-density strained InAs quantum-dot in the active region.

〇RYUUTAROU BAN¹, HIROHARU SUGAWARA¹, KOUICHI AKAHANE², NAOKATSU YAMAMOTO² (1.Tokyo Metro. Univ., 2.NICT)

4:30 PM - 6:30 PM

[13p-P4-2] Numerical simulation of exciton absorption spectra of photodiode with an asymmetric coupled quantum well

〇Koichiro Sakaguchi¹, Hiroki Funaki¹, Takehiro Fukushima¹, Yasunori Tokuda¹ (1.Okayama prefectural Univ.)

4:30 PM - 6:30 PM

[13p-P4-3] Triangular Barrier Phototransistor for High-Sensitivity Detection of Short Wave Infrared

〇Masato Ohmori¹, Kazuya Sugimura¹, Tomoya Kojima¹, Sakunari Kado¹, Takeshi Noda², Pavel Vitushinskiy¹, Naotaka Iwata¹, Hiroyuki Sakaki^1,² (1.Toyota Tech. Inst., 2.NIMS)

Sessions

3 Optics and Photonics » 3.13 Semiconductor optical devices

[12a-A17-1~15] 3.13 Semiconductor optical devices

▲ [12a-A17-2] Change in Photo Induced Minority Carrier Lifetime of PN Junction with Bias Voltage

▲ [12a-A17-11] Fabrication of SiC Membrane High Contrast Grating Using Nanoimprint Lithography

△ [12a-A17-12] Transverse-mode control of transverse-coupled cavity VCSELs using Vernier effect

▲ [12a-A17-14] Chirp Reduction Along with Modulation Bandwidth Enhancement Utilizing Coupled Cavity VCSEL

▲ [12a-A17-15] Fabrication and photoluminescence characterization of capsule-shaped metallic InP/InGaAs cavity structures

[12p-A17-1~19] 3.13 Semiconductor optical devices

△ [12p-A17-2] Optical interconnection between III-V chips on Si by using photonic wire bonding

△ [12p-A17-10] Room-temperature continuous-wave operation of semiconductor membrane distributed-reflector laser with butt-joint built-in structure

△ [12p-A17-11] Low voltage operation of GaInAsP/InP Membrane Laser

△ [12p-A17-14] Photoluminescence in GeSn-on-quartz structures fabricated by rapid thermal annealing

[13p-P4-1~3] 3.13 Semiconductor optical devices

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