[12p-A17-1~19] 3.13 Semiconductor optical devices

[12p-A17-7] Surface corrugation and optical properties of InGaAs layers grown on (775) B InP substrate by Molecular Beam Epitaxy and their indium composition dependence

〇Teruyoshi Matsuda¹, Satoshi Shimomura¹, Shun Morisada¹ (1.Ehime Univ.)

Keywords:semiconductor,surface emission laser,Molecular Beam Epitaxy