The 62nd JSAP Spring Meeting, 2015

Presentation information

Oral presentation

15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[12p-A18-1~18] 15.8 Crystal evaluation, impurities and crystal defects

Thu. Mar 12, 2015 2:00 PM - 7:00 PM A18 (6A-208)

2:30 PM - 2:45 PM

[12p-A18-3] Infrared absorption measurement of low concentration carbon in Si crystal (VI) SIMS measurement and preparation of standard samples down to 5x1014 cm−3

〇Naohisa Inoue1, 7, Kaori Watanabe2, Yasunori Gotou3, Masumi Obuchi4, Hirofumi Seki5, Hiroyuki Uno6, Yuichi Kawamura7 (1.Tokyo Univ. Agri. & Technol., 2.Systems Eng. Inc., 3.Toyota Motor Co., 4.Nano Science Co., 5.Toray Res. C. Inc., 6.S. H. I. Exam. & Inspec., 7.Osaka Pref. Unic.)

Keywords:silicon,carbon,infrared