[12p-A18-1~18] 15.8 Crystal evaluation, impurities and crystal defects

[12p-A18-3] Infrared absorption measurement of low concentration carbon in Si crystal (VI) SIMS measurement and preparation of standard samples down to 5x10¹⁴ cm⁻³

〇Naohisa Inoue^{1, 7}, Kaori Watanabe², Yasunori Gotou³, Masumi Obuchi⁴, Hirofumi Seki⁵, Hiroyuki Uno⁶, Yuichi Kawamura⁷ (1.Tokyo Univ. Agri. & Technol., 2.Systems Eng. Inc., 3.Toyota Motor Co., 4.Nano Science Co., 5.Toray Res. C. Inc., 6.S. H. I. Exam. & Inspec., 7.Osaka Pref. Unic.)

Keywords:silicon,carbon,infrared