The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[12p-A18-1~18] 15.8 Crystal evaluation, impurities and crystal defects

Thu. Mar 12, 2015 2:00 PM - 7:00 PM A18 (6A-208)

3:00 PM - 3:15 PM

[12p-A18-5] Growth of Czochralski Silicon Crystals with Ultralow Carbon Concentration by Evaporating Carbon Impurities from Silicon Melt

〇Yuta Nagai1, Kazuhiko Kashima1, Satoko Nakagawa1, Mitsuo Higasa1 (1.GlobalWafers Japan)

Keywords:Silicon,Crystal Growth,Carbon