[12p-A21-1~13] 13.8 Compound and power electron devices and process technology

[12p-A21-9] GaN HEMT Drain-Lag Performance Dependence on GaN Channel Quality

〇Youichi Kamada¹, Naoya Okamoto¹, Masaru Sato¹, Atsushi Yamada¹, Junji Kotani¹, Tetsuro Ishiguro¹, Toshihiro Ohki¹, Shirou Ozaki¹, Yoshitaka Niida¹, Kozo Makiyama¹, Keiji Watanabe¹, Kazukiyo Joshin¹ (1.Fujitsu Laboratories Ltd.)

Keywords:Drain-lag