[12p-A23-1~11] 13.5 Semiconductor devices and related techologies

[12p-A23-11] Detailed Analysis of Minimum Operation Voltage (V_min) of Extraordinarily Unstable Cells in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM

〇Tomoko Mizutani¹, Yoshiki Yamamoto², Hideki Makiyama², Tomohiro Yamashita², Hidekazu Oda², Shiro Kamohara², Nobuyuki Sugii², Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.LEAP)

Keywords:minimum operation voltage,SRAM,variability