[12p-D7-1~22] 17.1 Growth technology

△ [12p-D7-5] Ni-assisted low-temperature formation of epitaxial graphene on Si substrate and its growth mechanism through real-time/angle-resolved XPS observations

〇Mika Hasegawa¹, Ryota Suto¹, Kenta Sugawara¹, Shota Sambonsuge¹, Naoki Haramoto¹, Yuden Teraoka², Akitaka Yoshigoe², Hirokazu Fukidome¹, Maki Suemitsu^{1, 3} (1.RIEC,Tohoku Univ., 2.JAEA, 3.JST-CREST)

Keywords:graphene,silicide,XPS