Oral presentation

[12a-D6-5~10] 17.1 Growth technology

Thu. Mar 12, 2015 10:15 AM - 11:45 AM D6 (16-206)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:15 AM - 10:30 AM

[12a-D6-5] Formation of Co Nanoparticles for CNT Growth Using All-Vacuum Processes

〇Daisuke Kuwada¹, Ryunosuke Takeyama¹, Hirotaka Nakano¹, Yuya Chinen¹, Yasushi Hoshino¹, Yasunao Saito¹, Jyoji Nakata¹ (1.Kanagawa Univ.)

10:30 AM - 10:45 AM

[12a-D6-6] Analysis on relation of diameters between ND and CNT after CNT growth from ND

〇Akio Hayashi¹, Ryo Shiina¹, Michiharu Arifuku², Noriko Kiyoyanagi², Yoshihiro Kobayashi¹ (1.Osaka Univ., 2.nihonkayaku)

10:45 AM - 11:00 AM

△ [12a-D6-7] Estimation of carbon nanotubes synthesized by non-catalytic CVD method

〇(B)Yu Hirano¹, Masafumi Inaba¹, Megumi Shibuya¹, Kazuma Suzuki¹, Chih-Yu Lee¹, Miho Myodo¹, Atsushi Hiraiwa¹, Wataru Norimatsu², Michiko Kusunoki², Hiroshi Kawarada¹ (1.Waseda Univ., 2.Nagoya Univ.)

11:00 AM - 11:15 AM

[12a-D6-8] SWNT growth from Rh catalysts by alcohol gas source method in high vacuum

〇(M1)Akinari Kozawa¹, Takahiro Saida¹, Shigeya Naritsuka¹, Takahiro Maruyama¹ (1.Meijo Univ.)

11:15 AM - 11:30 AM

[12a-D6-9] Growth of SWCNTs by Hot-Filament CVD at Low-Temperatures Using Double-Layer Film Consisting of Iron and Cobalt Layers as Catalyst

Tomotaka Suzuki¹, Sichang Kim¹, Yusuke Kawaida¹, Tomoki Hanayama¹, Kazuki Maruyama¹, Atsushi Miki¹, 〇Yutaka Ishikawa¹ (1.Nippon Inst. of Tech.)

11:30 AM - 11:45 AM

[12a-D6-10] Investigation of catalytic supporter for synthesis of multi-walled carbon nanotubes and multi-walled carbon nanocoils

〇Tetsuo Iida¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹, Hitoshi Ue², Kazuki Shimizu³, Yoshito Umeda⁴ (1.Toyohashi Univ. of Technol., 2.Tokai Carbon Co., Ltd., 3.Shonan Plastic Mfg. Co., Ltd., 4.Toho Gas Co., Ltd.)

Oral presentation

[12p-D7-1~22] 17.1 Growth technology

Thu. Mar 12, 2015 1:15 PM - 7:00 PM D7 (16-207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[12p-D7-1] [Young Scientist Presentation Award Speech] Photovoltaic properties of graphene/MoS₂/Si solar cell using CVD-grown MoS₂ thin film

〇Yuka Tsuboi¹, Feijiu Wang¹, Daichi Kozawa¹, Yuhei Miyauchi¹, Shinichiro Mouri¹, Kazunari Matsuda¹ (1.IAE, Kyoto Univ.)

1:30 PM - 1:45 PM

[12p-D7-2] Graphene quasi-1D structure on high-index SiC facets

〇Shingo Hayashi¹, Kouhei Morita¹, Takashi Kajiwara¹, Anton Visikovskiy¹, Takushi Iimori², Fumio Komori², Hirokazu Tanaka³, Akinobu Kanda³, Satoru Tanaka¹ (1.Kyushu Univ., 2.Univ. of Tokyo, 3.Univ. of Tsukuba)

1:45 PM - 2:00 PM

[12p-D7-3] Relation between graphene growth and step-bunching on SiC

〇(M2)Osamu Yasui¹, Wataru Norimatsu¹, Michiko Kusunoki¹ (1.Nagoya Univ.)

2:00 PM - 2:15 PM

[12p-D7-4] Buffer-layer-free graphene on SiC(0001) by quenching menthod

〇(P)Jianfeng Bao¹, Hiroshi Iwata², Wataru Norimatsu², Michiko Kusunoki¹ (1.EcoTopia Science Institute. Nagoya University, 2.Department of Applied Chemistry. Graduate School of Engineering. Nagoya University)

2:15 PM - 2:30 PM

△ [12p-D7-5] Ni-assisted low-temperature formation of epitaxial graphene on Si substrate and its growth mechanism through real-time/angle-resolved XPS observations

〇Mika Hasegawa¹, Ryota Suto¹, Kenta Sugawara¹, Shota Sambonsuge¹, Naoki Haramoto¹, Yuden Teraoka², Akitaka Yoshigoe², Hirokazu Fukidome¹, Maki Suemitsu^1,³ (1.RIEC,Tohoku Univ., 2.JAEA, 3.JST-CREST)

2:30 PM - 2:45 PM

△ [12p-D7-6] Observation of growing process of graphene on SiC (0001) formed by laser-induced growth

〇(M1)Masakazu Hattori¹, Hiroshi Ikenoue¹, Daisuke Nakamura¹, Tatsuo Okada¹, Kazuaki Furukawa², Makoto Takamura², Hiroki Hibino² (1.Kyushu Univ., 2.NTT Basic Res. Labs.)

2:45 PM - 3:00 PM

[12p-D7-7] Evaluation of spacial distribution of graphene formed on SiC by Conductive AFM

〇Takuro Inamoto¹, Mariko Sato¹, Takeshi Fujii¹ (1.Fuji Electric)

3:00 PM - 3:15 PM

[12p-D7-8] High Quality Graphene Growth using SiC single-crystalline thin films on Hybrid Device Wafers

〇Hirokazu Fukidome¹, Shoji Akiyama², Keiichiro Tashima¹, Kazutoshi Funakubo¹, Maki Suemitsu¹, Shigeru Konishi², Hiroshi Mogi², Makoto Kawai², Yoshihiro Kubota², Koji Horiba³, Hiroshi Kumigashira³ (1.RIEC, Tohoku Univ., 2.ShinEtsu Chemical, 3.KEK)

3:15 PM - 3:30 PM

△ [12p-D7-9] CVD synthesis of graphene using interfacial graphitization of liquid gallium catalyst

〇(M1)Takaki Hiyama^1,², Katsuhisa Murakami^1,², Jun-ichi Fujita^1,² (1.Tsukuba Univ., 2.TIMS)

3:30 PM - 3:45 PM

[12p-D7-10] Synthesis of large area graphene on insulator substrate by gallium vapor assisted CVD

〇Katsuhisa Murakami^1,², Syunsuke Tanaka¹, Ayaka Hirukawa¹, Takaki Hiyama^1,², Emi Kano^1,³, Masaki Takeguchi³, Jun-ichi Fujita^1,² (1.Univ. Tsukuba, 2.TIMS, 3.NIMS)

3:45 PM - 4:00 PM

△ [12p-D7-11] In-situ TEM Observation of Graphitizing reaction on Cu Nano-Particle

〇Naoto Ito¹, Katsuhisa Murakami¹, Emi Kano^1,², Masaki Takeguchi², Jun-ichi Fujita¹ (1.Tsukuba Univ., 2.NIMS)

Break （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

[12p-D7-12] Effect of source molecule on the structure of Nitrogen-doped graphene

〇Tokio Katoh¹, Gaku Imamura¹, Seiji Obata¹, Koichiro Saiki¹ (1.Univ. of Tokyo)

4:30 PM - 4:45 PM

[12p-D7-13] Effect of oxygen partial pressure on CVD growth of graphene on Cu

〇(DC)Tomoo Terasawa¹, Koichiro Saiki^1,² (1.Sch. of Sci., The Univ. of Tokyo, 2.Grad. Sch. of Frontier Sci., The Univ. of Tokyo)

4:45 PM - 5:00 PM

▲ [12p-D7-14] Visualizing Copper Assisted Transformation of Amorphous Carbon into Graphene by Current-Induced Annealing.

〇(D)Mohamad Saufi Rosmi^1,², Mohd Zamri Mohd Yusop^1,³, Golap Kalita¹, Yazid Yaakob^1,⁴, Chisato Takahashi¹, Masaki Tanemura¹ (1.Nagoya Inst. of Tech., 2.Univ. Pend. Sultan Idris, 3.Univ. Tech. Malaysia, 4.Univ. Putra Malaysia)

5:00 PM - 5:15 PM

▲ [12p-D7-15] A novel nanometer-level amorphous carbon coating method by direct pyrolysis of coronene without solvent and its application to the LiFePO₄ cathode for Li-ion battery

〇(P)ShuJun Ye¹, Akira Hasegawa¹, Hiroaki Kumakura¹, Eiki Yasakawa¹, Akihiro Nomura¹, Yoshimi kubo¹ (1.NIMS)

5:15 PM - 5:30 PM

△ [12p-D7-16] Etchant-free transfer method for bottom-up graphene nanoribbon

〇(PC)Manabu Ohtomo¹, Sekine Yoshiaki¹, Hibino Hiroki¹ (1.NTT Basic Research Labs.)

5:30 PM - 5:45 PM

▼ [12p-D7-17] Chemical vapor deposition growth of graphene with millimeter-scale grain size

〇SHENGNAN WANG¹, SATORU SUZUKI¹, MAKOTO TAKAMURA¹, HIROKI HIBINO¹ (1.NTT Basic Research Laboratories)

5:45 PM - 6:00 PM

[12p-D7-18] Direct synthesis of graphene on insulating substrates via plasma reduction of graphene oxide

〇Minoru Satou¹, Akada Keishi¹, Tomoo Terasawa², Seiji Obata¹, Koichiro Saiki^1,² (1.UT Frontier Sciences, 2.UT Sch. of Science)

6:00 PM - 6:15 PM

[12p-D7-19] Highly crystalline graphene formation from graphene oxide by ultrahigh temperature process under reactive environment using solar furnace

〇Takashi Ishida¹, Yuichiro Miyata¹, Yoshihiko Shinoda², Yoshihiro Kobayashi¹ (1.Osaka Univ., 2.WERC)

6:15 PM - 6:30 PM

[12p-D7-20] Multilayer layer graphene synthesis by Microwave Surface Wave Plasma CVD, and high quality according to ultraviolet light shading

〇Susumu Ichimura^1,², Hideo Uchida¹, Koichi Wakita¹, Yasuhiko Hayashi², Masayoshi Umeno¹ (1.Chubu Univ., 2.Okayama Univ.)

6:30 PM - 6:45 PM

△ [12p-D7-21] Direct Synthesis of Graphene on Plastic Flexible Substrates

〇Yusuke Ishibashi¹, Yasushi Kanai¹, Ohno Yasuhide^1,², Kenzo Maehashi^1,³, Koichi Inoue¹, Kazuhiko Matsumoto¹ (1.ISIR, Osaka Univ., 2.Univ. of Tokushima, 3.TUAT.)

6:45 PM - 7:00 PM

△ [12p-D7-22] Initial growth observation of plasma CVD graphene for mass production

〇Ryuichi Kato¹, Satoshi Minami¹, Yuki Okigawa^1,², Ishihara Masatou^1,², Yamada Takatoshi^1,², Hasegawa Masataka^1,² (1.TASC, 2.AIST)

Oral presentation

[14p-D7-7~9] 17.1 Growth technology

Sat. Mar 14, 2015 2:30 PM - 3:15 PM D7 (16-207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:30 PM - 2:45 PM

[14p-D7-7] Growth of graphitic carbon on BaF₂ substrate by Alcohol-CVD

〇(M1)Yan Tan¹, Nakamura Atsushi¹, Kubono Atsushi¹ (1.Shizuoka Univ.)

2:45 PM - 3:00 PM

△ [14p-D7-8] Growth and characterization of W-doped NbS₂ atomic layers

〇Shogo Sasaki¹, Yutaka Maniwa¹, Yasumitsu Miyata^1,² (1.Tokyo Metropolitan Univ., 2.JST-PRESTO)

3:00 PM - 3:15 PM

[14p-D7-9] Challenge to the fabrication of molybdenum disulfide (MoS₂) layer film by mist annealing

〇(B)Shota Sato¹, Toshiyuki Kawaharamura^1,², Mamoru Furuta^2,³ (1.Sys. Eng., Kochi Univ. of Tech., 2.Res. Inst., Kochi Univ. of Tech., 3.Dept. of Env. Sci., Kochi Univ. of Tech.)

Sessions

17 Nanocarbon Technology » 17.1 Growth technology

[12a-D6-5~10] 17.1 Growth technology

[12a-D6-5] Formation of Co Nanoparticles for CNT Growth Using All-Vacuum Processes

[12a-D6-6] Analysis on relation of diameters between ND and CNT after CNT growth from ND

△ [12a-D6-7] Estimation of carbon nanotubes synthesized by non-catalytic CVD method

[12a-D6-8] SWNT growth from Rh catalysts by alcohol gas source method in high vacuum

[12a-D6-9] Growth of SWCNTs by Hot-Filament CVD at Low-Temperatures Using Double-Layer Film Consisting of Iron and Cobalt Layers as Catalyst

[12a-D6-10] Investigation of catalytic supporter for synthesis of multi-walled carbon nanotubes and multi-walled carbon nanocoils

[12p-D7-1~22] 17.1 Growth technology

[12p-D7-1] [Young Scientist Presentation Award Speech] Photovoltaic properties of graphene/MoS₂/Si solar cell using CVD-grown MoS₂ thin film

[12p-D7-2] Graphene quasi-1D structure on high-index SiC facets

[12p-D7-3] Relation between graphene growth and step-bunching on SiC

[12p-D7-4] Buffer-layer-free graphene on SiC(0001) by quenching menthod

△ [12p-D7-5] Ni-assisted low-temperature formation of epitaxial graphene on Si substrate and its growth mechanism through real-time/angle-resolved XPS observations

△ [12p-D7-6] Observation of growing process of graphene on SiC (0001) formed by laser-induced growth

[12p-D7-7] Evaluation of spacial distribution of graphene formed on SiC by Conductive AFM

[12p-D7-8] High Quality Graphene Growth using SiC single-crystalline thin films on Hybrid Device Wafers

△ [12p-D7-9] CVD synthesis of graphene using interfacial graphitization of liquid gallium catalyst

[12p-D7-10] Synthesis of large area graphene on insulator substrate by gallium vapor assisted CVD

△ [12p-D7-11] In-situ TEM Observation of Graphitizing reaction on Cu Nano-Particle

[12p-D7-12] Effect of source molecule on the structure of Nitrogen-doped graphene

[12p-D7-13] Effect of oxygen partial pressure on CVD growth of graphene on Cu

▲ [12p-D7-14] Visualizing Copper Assisted Transformation of Amorphous Carbon into Graphene by Current-Induced Annealing.

▲ [12p-D7-15] A novel nanometer-level amorphous carbon coating method by direct pyrolysis of coronene without solvent and its application to the LiFePO₄ cathode for Li-ion battery

△ [12p-D7-16] Etchant-free transfer method for bottom-up graphene nanoribbon

▼ [12p-D7-17] Chemical vapor deposition growth of graphene with millimeter-scale grain size

[12p-D7-18] Direct synthesis of graphene on insulating substrates via plasma reduction of graphene oxide

[12p-D7-19] Highly crystalline graphene formation from graphene oxide by ultrahigh temperature process under reactive environment using solar furnace

[12p-D7-20] Multilayer layer graphene synthesis by Microwave Surface Wave Plasma CVD, and high quality according to ultraviolet light shading

△ [12p-D7-21] Direct Synthesis of Graphene on Plastic Flexible Substrates

△ [12p-D7-22] Initial growth observation of plasma CVD graphene for mass production

[14p-D7-7~9] 17.1 Growth technology

[14p-D7-7] Growth of graphitic carbon on BaF₂ substrate by Alcohol-CVD

△ [14p-D7-8] Growth and characterization of W-doped NbS₂ atomic layers

[14p-D7-9] Challenge to the fabrication of molybdenum disulfide (MoS₂) layer film by mist annealing

Authentication

Sessions

17 Nanocarbon Technology » 17.1 Growth technology

[12a-D6-5~10] 17.1 Growth technology

△ [12a-D6-7] Estimation of carbon nanotubes synthesized by non-catalytic CVD method

[12p-D7-1~22] 17.1 Growth technology

△ [12p-D7-5] Ni-assisted low-temperature formation of epitaxial graphene on Si substrate and its growth mechanism through real-time/angle-resolved XPS observations

△ [12p-D7-6] Observation of growing process of graphene on SiC (0001) formed by laser-induced growth

△ [12p-D7-9] CVD synthesis of graphene using interfacial graphitization of liquid gallium catalyst

△ [12p-D7-11] In-situ TEM Observation of Graphitizing reaction on Cu Nano-Particle

▲ [12p-D7-14] Visualizing Copper Assisted Transformation of Amorphous Carbon into Graphene by Current-Induced Annealing.

▲ [12p-D7-15] A novel nanometer-level amorphous carbon coating method by direct pyrolysis of coronene without solvent and its application to the LiFePO4 cathode for Li-ion battery

△ [12p-D7-16] Etchant-free transfer method for bottom-up graphene nanoribbon

▼ [12p-D7-17] Chemical vapor deposition growth of graphene with millimeter-scale grain size

△ [12p-D7-21] Direct Synthesis of Graphene on Plastic Flexible Substrates

△ [12p-D7-22] Initial growth observation of plasma CVD graphene for mass production

[14p-D7-7~9] 17.1 Growth technology

△ [14p-D7-8] Growth and characterization of W-doped NbS2 atomic layers

Authentication

▲ [12p-D7-15] A novel nanometer-level amorphous carbon coating method by direct pyrolysis of coronene without solvent and its application to the LiFePO₄ cathode for Li-ion battery

△ [14p-D7-8] Growth and characterization of W-doped NbS₂ atomic layers