[12p-P17-1~7] 15.5 Group IV crystals and alloys

[12p-P17-3] Characterization of MOSFETs fabricated on strained Si/Si_1-xC_x/Si(001) structures formed by using ion-implantation technique

〇Ryo Nakagomi¹, Shoichiro Sakai¹, Kosuke Fujiwara¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Noritaka Usami², Yusuke Hoshi², Kentaro Sawano³ (1.CCST Univ. of Yamanashi, 2.Nagoya Univ., 3.ARL Tokyo City Univ.)

Keywords:semiconductor