[13a-A23-1~10] 13.5 Semiconductor devices and related techologies

[13a-A23-8] [Silicon Technology Division Award Speech] High Performance InGaAs-OI MOSFETs on Si by Novel Direct Wafer Bonding Technology applicable to Large Wafer Size Si

〇SangHyeon Kim^{1, 2, 3}, Yuki Ikku^{1, 2}, Masafumi Yokoyama¹, Ryosho Nakane¹, Jian Li⁴, Yung-Chung Kao⁴, Mitsuru Takenaka^{1, 2}, Shinichi Takagi^{1, 2} (1.The University of Tokyo, 2.JST-CREST, 3.Korea Institute of Science and Technology, 4.IntelliEPI, Inc.)

Keywords:InGaAs MOSFET,Wafer bonding