[13a-A24-1~13] 13.3 絶縁膜技術

▲ [13a-A24-12] In-situ Formation of HfN_x Gate Stack Structures Utilizing ECR Plasma Sputtering

〇Atthi Nithi¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Tech.)

キーワード：ECR plasma sputtering,High-k gate insulator,Hafnium nitride