Molecular Dynamics Study on Dipole Layer Formation at high-k/SiO<sub>2</sub> Interface (2): Reproduction of Dipole at MgO/SiO<sub>2</sub> Disobeying Oxygen Density Accommodation Model

Ryota Kunugi

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[13a-A24-1~13] 13.3 Insulator technology

Fri. Mar 13, 2015 9:00 AM - 12:30 PM A24 (6A-217)

11:15 AM - 11:30 AM

[13a-A24-9] Molecular Dynamics Study on Dipole Layer Formation at high-k/SiO₂ Interface (2): Reproduction of Dipole at MgO/SiO₂ Disobeying Oxygen Density Accommodation Model

〇Ryota Kunugi¹, Masahiro Hashiguchi¹, Kosuke shimura¹, Atsushi Ogura^3,⁵, Shinichi Satoh^4,⁵, Takanobu Watanabe^1,^2,⁵ (1.Waseda Univ., 2.Waseda-INN, 3.Meiji Univ., 4.University of Hyogo, 5.JST-CREST)

Keywords:high-k film

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Presentation information

[13a-A24-1~13] 13.3 Insulator technology

[13a-A24-9] Molecular Dynamics Study on Dipole Layer Formation at high-k/SiO2 Interface (2): Reproduction of Dipole at MgO/SiO2 Disobeying Oxygen Density Accommodation Model

[13a-A24-9] Molecular Dynamics Study on Dipole Layer Formation at high-k/SiO₂ Interface (2): Reproduction of Dipole at MgO/SiO₂ Disobeying Oxygen Density Accommodation Model