[13a-A27-1~13] 8.3 deposition of thin film and surface treatment

[13a-A27-6] Effects of Substrate Temperature on High Speed Layer Exchange Ge Crystallization at Low Temperature using Sputtering Method

〇Kazunori Koga¹, Daiki Ichida¹, Shinji Hashimoto¹, Hyunwoong Seo¹, Daisuke Yamashita¹, Naho Itagaki^{1, 2}, Masaharu Shiratani¹ (1.Kyushu Univ., 2.JST PRESTO)

Keywords:layer exchange crystallization,sputtering,flexible device