The 62nd JSAP Spring Meeting, 2015

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13a-B1-1~17] 15.4 III-V-group nitride crystals

Fri. Mar 13, 2015 8:30 AM - 1:00 PM B1 (6B-101)

10:45 AM - 11:00 AM

[13a-B1-9] [Young Scientist Presentation Award Speech] Stimulated emission characteristics of the (1–101) InGaN optical stripe cavity on (001) Si substrate Stimu

〇Maki Kushimoto1, Yoshio Honda1, Hiroshi Amano1, 2 (1.Nagoya Univ., 2.Akasaki Research Center)

Keywords:InGaN,Semipolar,Si