The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[13a-B4-1~10] 15.6 Group IV Compound Semiconductors

Fri. Mar 13, 2015 9:00 AM - 11:45 AM B4 (6B-104)

9:00 AM - 9:15 AM

[13a-B4-1] Theoretical Investigation for Reaction Processes of Initial Oxidation on SiC Surfaces

〇Ayako Ito1, Toru Akiyama1, Kohji Nakamura1, Tomonori Ito1, Hiroyuki Kageshima2, Masashi Uematsu3, Kenji Shiraishi4 (1.Mie Univ., 2.Shimane Univ., 3.Keio Univ., 4.Nagoya Univ.)

Keywords:silicon carbide,Oxidation