The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[13a-B4-1~10] 15.6 Group IV Compound Semiconductors

Fri. Mar 13, 2015 9:00 AM - 11:45 AM B4 (6B-104)

9:15 AM - 9:30 AM

[13a-B4-2] Theoretical study for oxidation reaction processes at 4H-SiC/SiO2 interfaces

〇Toru Akiyama1, Ayako Ito1, Kohji Nakamura1, Tomonori Ito1, Hiroyuki Kageshima2, Masashi Uematsu3, Kenji Shiraishi4 (1.Mie Univ., 2.Shimane Univ., 3.Keio Univ., 4.Nagoya Univ.)

Keywords:SiC