The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[13a-B4-1~10] 15.6 Group IV Compound Semiconductors

Fri. Mar 13, 2015 9:00 AM - 11:45 AM B4 (6B-104)

9:30 AM - 9:45 AM

[13a-B4-3] First-Principles/Classical Molecular Dynamics Simulations of 4H-SiC Oxidation

〇Takahiro Yamasaki1, 2, Nobuo Tajima1, 2, Tomoaki Kaneko1, 2, Nobutaka Nishikawa3, Tatsuo Schimizu4, koichi Kato4, Takahisa Ohno1, 2, 5 (1.NIMS, 2.MARCEED, 3.Mizuho I&R Inst., 4.Toshiba R&D Center, 5.IIS, Univ. of Tokyo)

Keywords:Power Device,Oxidation,SiC