[13p-A17-1~11] 15.2 II-VI and related compounds

[13p-A17-1] Improvement of the domain structure of the ZnTe film using the high-temperature ZnTe buffer layer

〇Takayuki Aiba¹, Taizo Nakasu¹, Sotaro Yamashita¹, Shota Hattori¹, Takeru Kizu¹, Wei-Che Sun¹, Kosuke Taguri¹, Fukino Kazami¹, Yuki Hashimoto¹, Shun Ozaki¹, Masakazu Kobayashi^{1, 2}, Toshiaki Asahi³ (1.Waseda Univ. Dept. of Elec. Eng. and Biosci., 2.Waseda Univ. Lab. for Mat. Sci.&Tech., 3.JX Nippon Mining & Metals Corporation)

Keywords:ZnTe,sapphire,buffer layer