Investigation of indium tin oxide p-cladding layers for II-VI compound semiconductor laser diodes on InP substrates

Presentation information

Oral presentation

15 Crystal Engineering » 15.2 II-VI and related compounds

Fri. Mar 13, 2015 4:15 PM - 7:15 PM A17 (6A-207)

6:15 PM - 6:30 PM

〇(B)Kouji Fukushima¹, Ichirou Nomura¹, Tomohiro Shiraishi¹, Shingo Takamatsu¹, Ryouhei Kobayashi¹, Katsumi Kishino¹ (1.Sophia Univ.)

Keywords:II-VI compound semiconductor,Indium tin oxide