In-situ TEM observation of Cu/MoOx/Al2O3 having double insulator layers

Shuichiro Hirata

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Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related techologies

[13p-A23-1~10] 13.5 Semiconductor devices and related techologies

Fri. Mar 13, 2015 4:15 PM - 7:00 PM A23 (6A-216)

5:00 PM - 5:15 PM

[13p-A23-4] In-situ TEM observation of Cu/MoO_x/Al₂O₃ having double insulator layers

〇Shuichiro Hirata¹, Akihito Takahashi¹, Masaki Kudo¹, Takahiro Hiroi¹, Akitoshi Nakane¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.IST, Hokkaido Univ.)

Keywords:In-situ TEM

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Presentation information

[13p-A23-1~10] 13.5 Semiconductor devices and related techologies

[13p-A23-4] In-situ TEM observation of Cu/MoOx/Al2O3 having double insulator layers

[13p-A23-4] In-situ TEM observation of Cu/MoO_x/Al₂O₃ having double insulator layers