[13p-A23-1~10] 13.5 Semiconductor devices and related techologies

[13p-A23-3] Floating Gate Memory Effect on Double Layer 2D-InAs XOI FET

〇Takaya Magatayama¹, Shinya Kano¹, Kuniharu Takei², Steven Chuang², Ali Javey², Hideya Kumomi³, Hideo Hosono^{1, 3, 4}, Yutaka Majima^{1, 3} (1.Materials and Structures Laboratory, Tokyo Institute of Technology, 2.UC Berkeley, 3.Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4.Frontier Research Center, Tokyo Institute of Technology)

Keywords:field effect transistor,III-V semiconductor