[13p-A23-1~10] 13.5 Semiconductor devices and related techologies

[13p-A23-2] Room Temperature Solid Diffusion between Ni and InAs

〇Takaya Magatayama¹, Koji Horiba², Hiroshi Kumigashira², Hideya Kumomi³, Hideo Hosono^{1, 3, 4}, Yutaka Majima^{1, 3} (1.Materials and Structures Laboratory, Tokyo Institute of Technology, 2.KEK-PF, 3.Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4.Frontier Research Center, Tokyo Institute of Technology)

Keywords:III-V semiconductor