The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[13p-B4-1~9] 15.6 Group IV Compound Semiconductors

Fri. Mar 13, 2015 4:15 PM - 6:30 PM B4 (6B-104)

4:15 PM - 4:30 PM

△ [13p-B4-1] Quantitative Characterization of Near-Interface Oxide Trap Density in SiC MOS Capacitors by Transient Capacitance Measurements at Various Temperatures

〇Yuki Fujino1, Richard Heihachiro Kikuchi1, Koji Kita1, 2 (1.The Univ. of Tokyo, 2.JST-PRESTO)

Keywords:transient measurement,MOS,oxide trap